FGA25N120ANTDTU Tech Specifications

FGA25N120ANTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Active
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Current Rating 50A
Element Configuration Single
Input Type Standard
Rise Time 60ns
Turn-Off Delay Time 190 ns
Max Collector Current 50A
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.65V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A
Continuous Collector Current 50A
Gate Charge 200nC
Td (on/off) @ 25°C 50ns/190ns
Gate-Emitter Voltage-Max 20V
Height 23.8mm
Width 5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.40101g
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 312W
Base Part Number FGA25N120A
Power Dissipation 312mW
Turn On Delay Time 50 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Reverse Recovery Time 350 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 25A, 10 Ω, 15V
Max Junction Temperature (Tj) 150°C
IGBT Type NPT and Trench
Current - Collector Pulsed (Icm) 90A
Switching Energy 4.1mJ (on), 960μJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Length 15.8mm
Radiation Hardening No
Lead Free Lead Free
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