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FGA25S125P-SN00337 Tech Specifications

FGA25S125P-SN00337 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 250W
Polarity/Channel Type N-CHANNEL
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1250V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 25A
Gate Charge 204nC
Td (on/off) @ 25°C 24ns/502ns
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Through Hole
Weight 6.401g
Operating Temperature -55°C~175°C TJ
Published 2016
Part Status Active
Number of Terminations 3
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.35V
Collector Emitter Breakdown Voltage 1.25kV
Test Condition 600V, 25A, 10 Ω, 15V
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 75A
Switching Energy 1.09mJ (on), 580μJ (off)
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FGA25S125P-SN00337 Documents

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