FGA30N65SMD Tech Specifications

FGA30N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~175°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 300W
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 60A
Collector Emitter Breakdown Voltage 650V
Turn On Time 41 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 90A
Switching Energy 716μJ (on), 208μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Length 16.2mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Power Dissipation 300W
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 35ns
Collector Emitter Saturation Voltage 2.29V
Test Condition 400V, 30A, 6 Ω, 15V
Turn Off Time-Nom (toff) 125 ns
Gate Charge 87nC
Td (on/off) @ 25°C 14ns/102ns
Gate-Emitter Voltage-Max 20V
Height 20.1mm
Width 5mm
RoHS Status ROHS3 Compliant
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