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FGA30T65SHD Tech Specifications

FGA30T65SHD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C~175°C TJ
Published 2016
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 238W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 238W
Max Collector Current 60A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 30A, 6 Ω, 15V
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
Switching Energy 598μJ (on), 167μJ (off)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Weight 6.401g
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
HTS Code 8541.29.00.95
Peak Reflow Temperature (Cel) NOT SPECIFIED
Input Type Standard
Collector Emitter Voltage (VCEO) 2.1V
Reverse Recovery Time 31.8 ns
Collector Emitter Saturation Voltage 2.14V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Gate Charge 54.7nC
Td (on/off) @ 25°C 14.4ns/52.8ns
RoHS Status ROHS3 Compliant
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FGA30T65SHD Documents

Download datasheets and manufacturer documentation for FGA30T65SHD

  • Datasheets

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