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FGA50N100BNTD2 Tech Specifications

FGA50N100BNTD2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 156W
Element Configuration Single
Power - Max 156W
Polarity/Channel Type N-CHANNEL
Max Collector Current 50A
Collector Emitter Breakdown Voltage 1kV
Collector Emitter Saturation Voltage 1.5V
Test Condition 600V, 60A, 10 Ω, 15V
Turn Off Time-Nom (toff) 308 ns
Gate Charge 257nC
Td (on/off) @ 25°C 34ns/243ns
Gate-Emitter Thr Voltage-Max 7V
Height 20.1mm
Width 5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1kV
Reverse Recovery Time 75 ns
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 102 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
IGBT Type NPT and Trench
Current - Collector Pulsed (Icm) 200A
Gate-Emitter Voltage-Max 25V
Fall Time-Max (tf) 100ns
Length 15.8mm
Radiation Hardening No
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FGA50N100BNTD2 Documents

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