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FGAF40N60UFTU Tech Specifications

FGAF40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-3P-3 Full Pack
Weight 6.962g
Operating Temperature -55°C~150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Current Rating 40A
Element Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
Continuous Drain Current (ID) 40A
Drain to Source Breakdown Voltage 600V
Turn On Time 67 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Gate Charge 77nC
Td (on/off) @ 25°C 15ns/65ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 250ns
Length 15.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Number of Elements 1
Power Dissipation 100W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 3V
Test Condition 300V, 20A, 10 Ω, 15V
Turn Off Time-Nom (toff) 190 ns
Current - Collector Pulsed (Icm) 160A
Switching Energy 470μJ (on), 130μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 26.5mm
Width 5.5mm
REACH SVHC No SVHC
Lead Free Lead Free
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FGAF40N60UFTU Documents

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