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FGB5N60UNDF Tech Specifications

FGB5N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 73.5W
JESD-30 Code R-PSSO-G2
Element Configuration Single
Input Type Standard
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 35 ns
Collector Emitter Saturation Voltage 2.4V
Test Condition 400V, 5A, 10 Ω, 15V
Turn Off Time-Nom (toff) 151.6 ns
Gate Charge 12.1nC
Td (on/off) @ 25°C 5.4ns/25.4ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 202ns
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Number of Elements 1
Case Connection COLLECTOR
Power - Max 73.5W
Polarity/Channel Type N-CHANNEL
Max Collector Current 10A
Collector Emitter Breakdown Voltage 600V
Turn On Time 7.5 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 5A
IGBT Type NPT
Current - Collector Pulsed (Icm) 15A
Switching Energy 80μJ (on), 70μJ (off)
Gate-Emitter Thr Voltage-Max 8.5V
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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FGB5N60UNDF Documents

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FGB5N60UNDF AMI Semiconductor / ON Semiconductor Transistors - IGBTs - Single 6760
FGB5N60UNDF Fairchild/ON Semiconductor Transistors - IGBTs - Single 6760

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