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FGH60N60SMD-F085 Tech Specifications

IGBT 600V 120A 600W TO247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
JESD-30 Code R-PSFM-T3
Rise Time-Max 60ns
Case Connection COLLECTOR
Power - Max 600W
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AB
Current - Collector (Ic) (Max) 120A
Turn On Time 66 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 180A
Switching Energy 1.59mJ (on), 390μJ (off)
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Transistor Application POWER CONTROL
Reverse Recovery Time 42ns
Voltage - Collector Emitter Breakdown (Max) 600V
Power Dissipation-Max (Abs) 600W
Test Condition 400V, 60A, 3 Ω, 15V
Turn Off Time-Nom (toff) 139 ns
Gate Charge 280nC
Td (on/off) @ 25°C 22ns/116ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 20ns
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