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FGH75N60UFTU Tech Specifications

FGH75N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Element Configuration Single
Power - Max 452W
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 75A, 3 Ω, 15V
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 225A
Switching Energy 3.05mJ (on), 1.35mJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.6mm
Width 4.7mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 452W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 150A
Collector Emitter Saturation Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 75A
Gate Charge 250nC
Td (on/off) @ 25°C 27ns/128ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 80ns
Length 15.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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FGH75N60UFTU Documents

Download datasheets and manufacturer documentation for FGH75N60UFTU

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