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FGL60N100BNTDTU Tech Specifications

FGL60N100BNTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Through Hole
Package / Case TO-264-3, TO-264AA
Weight 6.756g
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 1kV
Current Rating 60A
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 60A
Collector Emitter Breakdown Voltage 1kV
Collector Emitter Saturation Voltage 1.5V
Test Condition 600V, 60A, 51 Ω, 15V
Turn Off Time-Nom (toff) 760 ns
Gate Charge 275nC
Td (on/off) @ 25°C 140ns/630ns
Length 20mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 180W
Number of Elements 1
Power Dissipation 180W
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1kV
Reverse Recovery Time 1.2 μs
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 460 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
IGBT Type NPT and Trench
Current - Collector Pulsed (Icm) 120A
Height 26mm
Width 5mm
RoHS Status ROHS3 Compliant
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FGL60N100BNTDTU Documents

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