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FGP10N60UNDF Tech Specifications

FGP10N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 139W
Element Configuration Single
Input Type Standard
Transistor Application MOTOR CONTROL
Turn-Off Delay Time 55 ns
Max Collector Current 20A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.3V
Test Condition 400V, 10A, 10 Ω, 15V
Turn Off Time-Nom (toff) 89.3 ns
Gate Charge 37nC
Td (on/off) @ 25°C 8ns/52.2ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 24.8ns
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Power Dissipation 139W
Turn On Delay Time 8.1 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 37.7 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 15.4 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 10A
IGBT Type NPT
Current - Collector Pulsed (Icm) 30A
Switching Energy 150μJ (on), 50μJ (off)
Gate-Emitter Thr Voltage-Max 8.5V
Height 16.51mm
Width 4.83mm
RoHS Status ROHS3 Compliant
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FGP10N60UNDF Documents

Download datasheets and manufacturer documentation for FGP10N60UNDF

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