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FGP20N60UFDTU Tech Specifications

IGBT 600V 40A 165W TO220

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Input Type Standard
Power - Max 165W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 35 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 20A, 10 Ω, 15V
Turn Off Time-Nom (toff) 155 ns
Gate Charge 63nC
Td (on/off) @ 25°C 13ns/87ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 64ns
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Active
Number of Terminations 3
HTS Code 8541.29.00.95
Max Power Dissipation 165W
Element Configuration Single
Turn On Delay Time 13 ns
Transistor Application POWER CONTROL
Turn-Off Delay Time 87 ns
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Turn On Time 29 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 60A
Switching Energy 380μJ (on), 260μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 16.51mm
Width 4.83mm
RoHS Status ROHS3 Compliant
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FGP20N60UFDTU Documents

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