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FJAF4210RTU Tech Specifications

FJAF4210RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Through Hole
Package / Case TO-3P-3 Full Pack
Weight 6.962g
Operating Temperature 150°C TJ
Published 2017
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 80W
Frequency 30MHz
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 140V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 3A 4V
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Transition Frequency 30MHz
Collector Base Voltage (VCBO) -200V
hFE Min 50
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC -140V
Current Rating -10A
Number of Elements 1
Power Dissipation 80W
Gain Bandwidth Product 30MHz
Transistor Type PNP
Max Collector Current 10A
Current - Collector Cutoff (Max) 10μA ICBO
Collector Emitter Breakdown Voltage 140V
Collector Emitter Saturation Voltage -500mV
Emitter Base Voltage (VEBO) -6V
Radiation Hardening No
Lead Free Lead Free
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FJAF4210RTU Documents

Download datasheets and manufacturer documentation for FJAF4210RTU

  • Datasheets

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