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FJD5553TM Tech Specifications

FJD5553TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature 150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 400V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 400mA 3V
Collector Emitter Breakdown Voltage 400V
Max Breakdown Voltage 400V
Emitter Base Voltage (VEBO) 14V
Height 2.39mm
Width 6.22mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Max Power Dissipation 1.25W
Base Part Number FJD5553
Number of Elements 1
Power Dissipation 1.25W
Transistor Application SWITCHING
Transistor Type NPN
Max Collector Current 3A
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 1A
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 1.05kV
hFE Min 30
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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FJD5553TM Documents

Download datasheets and manufacturer documentation for FJD5553TM

  • Datasheets

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