FJN3303FBU Tech Specifications

FJN3303FBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 179mg
Operating Temperature 150°C TJ
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position BOTTOM
Number of Elements 1
Power - Max 650mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 400V
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 700V
hFE Min 14
Turn On Time-Max (ton) 1100ns
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 650mW
Base Part Number FJN3303
Configuration SINGLE
Transistor Application SWITCHING
Transistor Type NPN
Max Collector Current 1.5A
Current - Collector Cutoff (Max) 10μA ICBO
Collector Emitter Breakdown Voltage 400V
Frequency - Transition 4MHz
Emitter Base Voltage (VEBO) 9V
Turn Off Time-Max (toff) 4700ns
Radiation Hardening No
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