FJP3305H1TU Tech Specifications

FJP3305H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature 150°C TJ
Published 2008
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 75W
Frequency 4MHz
Number of Elements 1
Power Dissipation 75W
Gain Bandwidth Product 4MHz
Transistor Type NPN
Max Collector Current 4A
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 700V
hFE Min 8
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 700V
Current Rating 4A
Base Part Number FJP3305
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 400V
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 9V
Height 16.51mm
Width 4.83mm
RoHS Status ROHS3 Compliant
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FJP3305H1TU Documents

Download datasheets and manufacturer documentation for FJP3305H1TU

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