FJP5027OTU Tech Specifications

FJP5027OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 24 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature 150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 50W
Frequency 15MHz
Number of Elements 1
Power Dissipation 50W
Gain Bandwidth Product 15MHz
Transistor Type NPN
Max Collector Current 3A
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Transition Frequency 15MHz
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 800V
Current Rating 3A
Base Part Number FJP5027
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 800V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA 5V
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 800V
Collector Base Voltage (VCBO) 1.1kV
hFE Min 10
RoHS Status ROHS3 Compliant
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FJP5027OTU Documents

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