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FJPF5027RTU Tech Specifications

FJPF5027RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature 150°C TJ
Published 2003
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 800V
Current Rating 3A
Base Part Number FJPF5027
Element Configuration Single
Case Connection ISOLATED
Gain Bandwidth Product 15MHz
Transistor Type NPN
Max Collector Current 3A
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Transition Frequency 15MHz
Collector Base Voltage (VCBO) 1.1kV
hFE Min 10
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 40W
Frequency 15MHz
Number of Elements 1
Power Dissipation 40W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 800V
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 200mA 5V
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 800V
Collector Emitter Saturation Voltage 2V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
Lead Free Lead Free
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FJPF5027RTU Documents

Download datasheets and manufacturer documentation for FJPF5027RTU

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