FJV992FMTF Tech Specifications

FJV992FMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 30mg
Operating Temperature 150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Frequency 50MHz
Number of Elements 1
Power Dissipation 300mW
Gain Bandwidth Product 50MHz
Transistor Type PNP
Max Collector Current 50mA
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Transition Frequency 50MHz
Max Breakdown Voltage 120V
Emitter Base Voltage (VEBO) -5V
Height 1.04mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC -120V
Terminal Position DUAL
Current Rating -50mA
Base Part Number FJV992
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 120V
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA 6V
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage -300mV
Collector Base Voltage (VCBO) -120V
hFE Min 200
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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FJV992FMTF Documents

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