FQA19N60 Tech Specifications

FQA19N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Current Rating 18.5A
Voltage 600V
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 65 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 18.5A Tc
Rise Time 210ns
Vgs (Max) ±30V
Turn-Off Delay Time 150 ns
Threshold Voltage 5V
Drain to Source Breakdown Voltage 600V
Height 18.9mm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Current 16A
Power Dissipation 300W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380m Ω @ 9.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 135 ns
Continuous Drain Current (ID) 18.5A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 1150 mJ
Length 15.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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FQA19N60 Documents

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