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FQA6N90C-F109 Tech Specifications

MOSFET 900V N-Ch Q-FET advance C-Series

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 198W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6A Tc
Rise Time 90ns
Vgs (Max) ±30V
Turn-Off Delay Time 55 ns
Threshold Voltage 5V
Drain Current-Max (Abs) (ID) 6A
Pulsed Drain Current-Max (IDM) 24A
Height 18.9mm
Width 5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 198W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3 Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 650 mJ
Length 15.8mm
REACH SVHC No SVHC
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