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FQA7N80C-F109 Tech Specifications

MOSFET N-CH 800V 7A TO-3P

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Transistor Element Material SILICON
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Terminal Form THROUGH-HOLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 1.9Ohm
DS Breakdown Voltage-Min 800V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Surface Mount NO
Packaging Tube
Part Status Active
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application SWITCHING
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 580 mJ
Power Dissipation-Max (Abs) 198W
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FQA7N80C-F109 Documents

Download datasheets and manufacturer documentation for FQA7N80C-F109

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FQA7N80C_F109 Fairchild/ON Semiconductor Transistors - FETs, MOSFETs - Single 2744
FQA7N80_F109 Fairchild/ON Semiconductor Transistors - FETs, MOSFETs - Single 2646
FQA7N80_F109 AMI Semiconductor / ON Semiconductor Transistors - FETs, MOSFETs - Single 2623

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