FQB19N20LTM Tech Specifications

FQB19N20LTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 140MOhm
Voltage - Rated DC 200V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Voltage 200V
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 10.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 180 ns
Continuous Drain Current (ID) 21mA
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 250 mJ
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 21A
Number of Elements 1
Power Dissipation-Max 3.13W Ta 140W Tc
Current 17A
Power Dissipation 3.13W
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 21A Tc
Rise Time 300ns
Vgs (Max) ±20V
Turn-Off Delay Time 130 ns
Threshold Voltage 2V
Drain to Source Breakdown Voltage 200V
Nominal Vgs 2 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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