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FQB30N06LTM Tech Specifications

Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~175°C TJ
Published 2001
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 35mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 32A
Number of Elements 1
Element Configuration Single
Power Dissipation 3.75W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 32A Tc
Rise Time 210ns
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Threshold Voltage 2.5V
Drain to Source Breakdown Voltage 60V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.75W Ta 79W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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