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FQB4N80TM Tech Specifications

FQB4N80TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 3.9A
Number of Elements 1
Element Configuration Single
Power Dissipation 3.13W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Rise Time 45ns
Vgs (Max) ±30V
Turn-Off Delay Time 35 ns
Threshold Voltage 5V
Drain to Source Breakdown Voltage 800V
Height 4.83mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Published 2000
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 3.6Ohm
Voltage - Rated DC 800V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.13W Ta 130W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.6 Ω @ 1.95A, 10V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 460 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
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FQB4N80TM Documents

Download datasheets and manufacturer documentation for FQB4N80TM

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