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FQB55N10TM Tech Specifications
FQB55N10TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / Single MOSFETs Transistors |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 11 Weeks |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Series | QFET® |
Pbfree Code | yes |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Current Rating | 55A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 3.75W |
Turn On Delay Time | 25 ns |
Transistor Application | SWITCHING |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 55A Tc |
Rise Time | 250ns |
Vgs (Max) | ±25V |
Turn-Off Delay Time | 110 ns |
Threshold Voltage | 4V |
Drain to Source Breakdown Voltage | 100V |
Height | 6.35mm |
Width | 9.65mm |
REACH SVHC | No SVHC |
Lead Free | Lead Free |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Weight | 1.31247g |
Operating Temperature | -55°C~175°C TJ |
Published | 2000 |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 2 |
Resistance | 26mOhm |
Voltage - Rated DC | 100V |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Power Dissipation-Max | 3.75W Ta 155W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 26m Ω @ 27.5A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2730pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Fall Time (Typ) | 140 ns |
Continuous Drain Current (ID) | 55mA |
Gate to Source Voltage (Vgs) | 25V |
Pulsed Drain Current-Max (IDM) | 220A |
Length | 6.35mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
FQB55N10TM Documents
Download datasheets and manufacturer documentation for FQB55N10TM
-
Datasheets
Others include "FQB55" parts
The following parts include 'FQB55'
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FQB55N06TM | Fairchild/ON Semiconductor | Transistors - FETs, MOSFETs - Single | 60725 |
FQB55N06TM | AMI Semiconductor / ON Semiconductor | Transistors - FETs, MOSFETs - Single | 60725 |
FQB55N06TM MOS | VBSEMI | Specialized Hot ICs | 5351 |
FQB55N10 | FAIRCHI | Specialized Hot ICs | 19264 |
FQB55N10TM | Fairchild/ON Semiconductor | Transistors - FETs, MOSFETs - Single | 42164 |
FQB55N10TM | AMI Semiconductor / ON Semiconductor | Transistors - FETs, MOSFETs - Single | 42164 |
FQB55N10TM IC | Fairchild/ON Semiconductor | Specialized Hot ICs | 421 |
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FQB55N10TM brand manufacturers: ON Semiconductor, Bonchip stock, FQB55N10TM reference price. FQB55N10TM parameters, FQB55N10TM Datasheet PDF and pin diagram description download.You can use the FQB55N10TM Pluggable Connectors, DSP Datesheet PDF, find FQB55N10TM pin diagram and circuit diagram and usage method of function, FQB55N10TM electronics tutorials.You can download from the Bonchip.
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