FQB6N40CTM Tech Specifications

MOSFET N-CH/400V/6A/CFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 6A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 73W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 400V
Avalanche Energy Rating (Eas) 270 mJ
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 400V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 73W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6A Tc
Rise Time 65ns
Vgs (Max) ±30V
Turn-Off Delay Time 21 ns
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 24A
RoHS Status ROHS3 Compliant
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