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FQB7P20TM Tech Specifications

FQB7P20TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Published 2000
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 690MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Current Rating -7.3A
Number of Elements 1
Element Configuration Single
Power Dissipation 3.13W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 42 ns
Continuous Drain Current (ID) 7.3A
Drain to Source Breakdown Voltage -200V
Avalanche Energy Rating (Eas) 570 mJ
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -200V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.13W Ta 90W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 690m Ω @ 3.65A, 10V
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±30V
Turn-Off Delay Time 30 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 29.2A
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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