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FQB8N90CTM Tech Specifications

MOSFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 171W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 40 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.3A Tc
Rise Time 110ns
Vgs (Max) ±30V
Turn-Off Delay Time 70 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 25A
Height 4.83mm
Width 9.65mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3.15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 6.3A
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 850 mJ
Length 10.67mm
RoHS Status ROHS3 Compliant
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