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FQD11P06TM Tech Specifications

FQD11P06TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 185mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Current Rating -9.4A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 38W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 185m Ω @ 4.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±30V
Turn-Off Delay Time 15 ns
Threshold Voltage -4V
Drain to Source Breakdown Voltage -60V
Height 2.517mm
Width 6.1mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 6.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) -9.4A
Gate to Source Voltage (Vgs) 30V
Max Junction Temperature (Tj) 150°C
Length 6.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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