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FQD12N20LTM-F085 Tech Specifications

MOSFET N-CH 200V 9A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 36 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Series Automotive, AEC-Q101, QFET®
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A Tc
Rise Time 190ns
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 55W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 280m Ω @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 120 ns
Continuous Drain Current (ID) 9A
Drain to Source Breakdown Voltage 200V
RoHS Status ROHS3 Compliant
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