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FQD13N06LTM Tech Specifications

FQD13N06LTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 28W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 115m Ω @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 44A
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 115mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 11A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Tc
Rise Time 90ns
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Threshold Voltage 2.5V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 90 mJ
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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FQD13N06LTM Documents

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