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FQD13N10LTM Tech Specifications

FQD13N10LTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2000
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 72 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 95 mJ
Length 6.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 10A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 7.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A Tc
Rise Time 220ns
Vgs (Max) ±20V
Turn-Off Delay Time 22 ns
Threshold Voltage 2V
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 40A
Height 2.3mm
Width 6.1mm
REACH SVHC No SVHC
Lead Free Lead Free
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