FQD1N80TM Tech Specifications

FQD1N80TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 1A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1A Tc
Rise Time 25ns
Vgs (Max) ±30V
Turn-Off Delay Time 15 ns
Threshold Voltage 5V
Drain Current-Max (Abs) (ID) 1A
Pulsed Drain Current-Max (IDM) 4A
Nominal Vgs 5 V
Length 6.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2001
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 20Ohm
Voltage - Rated DC 800V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 45W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 1mA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 90 mJ
Height 2.3mm
Width 6.1mm
REACH SVHC No SVHC
Lead Free Lead Free
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FQD1N80TM Documents

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