FQD2N60CTM Tech Specifications

FQD2N60CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 600V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Voltage 650V
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7 Ω @ 950mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 28 ns
Continuous Drain Current (ID) 1.9A
Gate to Source Voltage (Vgs) 30V
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 1.9A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 44W Tc
Current 18A
Power Dissipation 2.5W
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.9A Tc
Rise Time 25ns
Vgs (Max) ±30V
Turn-Off Delay Time 24 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 600V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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