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FQH44N10-F133 Tech Specifications

MOSFET N-CH 100V 48A TO-247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
JESD-30 Code R-PSFM-T3
Power Dissipation-Max 180W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 48A Tc
Rise Time 190ns
Vgs (Max) ±25V
Turn-Off Delay Time 90 ns
JEDEC-95 Code TO-247AB
Drain-source On Resistance-Max 0.039Ohm
Pulsed Drain Current-Max (IDM) 192A
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Weight 6.39g
Operating Temperature -55°C~175°C TJ
Series QFET®
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 180W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 39m Ω @ 24A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 100 ns
Continuous Drain Current (ID) 48A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 530 mJ
RoHS Status ROHS3 Compliant
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