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FQI4N80TU Tech Specifications

MOSFET N-CH 800V 3.9A I2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084g
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 3.6Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.13W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.6 Ω @ 1.95A, 10V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 3.9A
Drain to Source Breakdown Voltage 800V
Height 9.2mm
Width 4.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 800V
Current Rating 3.9A
Power Dissipation-Max 3.13W Ta 130W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Rise Time 45ns
Vgs (Max) ±30V
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 460 mJ
Length 9.9mm
Radiation Hardening No
Lead Free Lead Free
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