FQP8P10 Tech Specifications

FQP8P10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~175°C TJ
Published 2002
JESD-609 Code e3
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 65W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 530m Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±30V
Turn-Off Delay Time 20 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 8A
Dual Supply Voltage -100V
Height 16.3mm
Width 4.7mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Terminal Finish Tin (Sn)
Voltage - Rated DC -100V
Current Rating -8A
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -100V
Nominal Vgs -4 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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