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FQPF11N50CF Tech Specifications

FQPF11N50CF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Qualification Status Not Qualified
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 550m Ω @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 75 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 670 mJ
Length 10.36mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series FRFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Tc
Rise Time 70ns
Vgs (Max) ±30V
Turn-Off Delay Time 120 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.55Ohm
Pulsed Drain Current-Max (IDM) 44A
Height 16.07mm
Width 4.9mm
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FQPF11N50CF Documents

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