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FQPF13N50CF Tech Specifications

FQPF13N50CF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2014
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 540mOhm
Additional Feature FAST SWITCHING
Voltage - Rated DC 500V
Current Rating 13A
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540m Ω @ 6.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 100 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series FRFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A Tc
Rise Time 100ns
Vgs (Max) ±30V
Turn-Off Delay Time 130 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 52A
REACH SVHC No SVHC
Lead Free Lead Free
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FQPF13N50CF Documents

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