FQPF20N06L Tech Specifications

FQPF20N06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 15.7A Tc
Rise Time 156ns
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Threshold Voltage 1V
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 62.8A
Length 10.16mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~175°C TJ
Published 2001
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 15.7A
Qualification Status Not Qualified
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 55m Ω @ 7.85A, 10V
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 15.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Height 9.19mm
Width 4.7mm
RoHS Status ROHS3 Compliant
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FQPF20N06L Documents

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