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FQPF45N15V2 Tech Specifications

MOSFET N-CH 150V 45A TO-TO-220F

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 150V
Current Rating 45A
Power Dissipation-Max 66W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 22.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3030pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 246 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 66W
Turn On Delay Time 22 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 45A Tc
Rise Time 232ns
Vgs (Max) ±30V
Turn-Off Delay Time 224 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.04Ohm
Radiation Hardening No
Lead Free Lead Free
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