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FQPF6N90C Tech Specifications

FQPF6N90C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 56W
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6A Tc
Rise Time 90ns
Vgs (Max) ±30V
Turn-Off Delay Time 55 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 650 mJ
Height 9.19mm
Width 4.7mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2003
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 2.3Ohm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 56W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3 Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 6A
Pulsed Drain Current-Max (IDM) 24A
Recovery Time 630 ns
Length 10.16mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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FQPF6N90C Documents

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