FQPF7N65CYDTU Tech Specifications

MOSFET 650V N-Ch Advance Q-FET C-Series

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Weight 2.565g
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 52W Tc
Power Dissipation 52W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A Tc
Rise Time 50ns
Vgs (Max) ±30V
Turn-Off Delay Time 90 ns
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Turn On Delay Time 20 ns
Rds On (Max) @ Id, Vgs 1.4 Ω @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1245pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 55 ns
Continuous Drain Current (ID) 7A
Drain Current-Max (Abs) (ID) 7A
Radiation Hardening No
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