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FQPF8N80CYDTU Tech Specifications

Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Weight 2.565g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 1.55Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 59W
Turn On Delay Time 40 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Rise Time 110ns
Vgs (Max) ±30V
Turn-Off Delay Time 65 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 8A
Avalanche Energy Rating (Eas) 850 mJ
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 800V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 8A
Qualification Status Not Qualified
Power Dissipation-Max 59W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.55 Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
RoHS Status ROHS3 Compliant
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