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FQPF9N25CYDTU Tech Specifications

MOSFET N-CH 250V 8.8A TO-220F

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Weight 2.565g
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 38W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
Rds On (Max) @ Id, Vgs 430m Ω @ 4.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 8.8A
Drain to Source Breakdown Voltage 250V
Length 10.36mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 38W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Rise Time 85ns
Vgs (Max) ±30V
Turn-Off Delay Time 90 ns
Gate to Source Voltage (Vgs) 30V
Height 16.07mm
Width 4.9mm
RoHS Status ROHS3 Compliant
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