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FQT1N60CTF-WS Tech Specifications

MOSFET N-CH 600V 0.2A SOT-223-4

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 2.1W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.5 Ω @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 0.2A
Feedback Cap-Max (Crss) 6 pF
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