FQU11P06TU Tech Specifications

FQU11P06TU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight 343.08mg
Operating Temperature -55°C~150°C TJ
Published 2014
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Current Rating -9.4A
Power Dissipation-Max 2.5W Ta 38W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) -9.4A
Gate to Source Voltage (Vgs) 30V
Recovery Time 83 ns
Length 6.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 185m Ω @ 4.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±30V
Turn-Off Delay Time 15 ns
Threshold Voltage -4V
Drain to Source Breakdown Voltage -60V
Height 6.1mm
Width 2.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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FQU11P06TU Documents

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