FQU13N10LTU Tech Specifications

FQU13N10LTU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight 343.08mg
Operating Temperature -55°C~150°C TJ
Published 2000
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 180MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 72 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 40A
Height 6.1mm
Width 2.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Current Rating 10A
Power Dissipation-Max 2.5W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A Tc
Rise Time 220ns
Vgs (Max) ±20V
Turn-Off Delay Time 22 ns
Threshold Voltage 2V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 95 mJ
Length 6.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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