HGTD1N120BNS9A Tech Specifications

HGTD1N120BNS9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2014
Part Status Active
Number of Terminations 2
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 60W
Current Rating 5.3A
JESD-30 Code R-PSSO-G2
Rise Time-Max 14ns
Power Dissipation 60W
Input Type Standard
Transistor Application MOTOR CONTROL
Turn-Off Delay Time 67 ns
Max Collector Current 5.3A
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.5V
Turn On Time 24 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A
IGBT Type NPT
Current - Collector Pulsed (Icm) 6A
Switching Energy 70μJ (on), 90μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Terminal Form GULL WING
Base Part Number HGTD1N120
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 15 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
JEDEC-95 Code TO-252AA
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Breakdown Voltage 1.2kV
Test Condition 960V, 1A, 82 Ω, 15V
Turn Off Time-Nom (toff) 333 ns
Gate Charge 14nC
Td (on/off) @ 25°C 15ns/67ns
Gate-Emitter Voltage-Max 20V
REACH SVHC No SVHC
Lead Free Lead Free
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